GaN on Si substrate with AlGaN/AlN intermediate layer

被引:190
作者
Ishikawa, H
Zhao, GY
Nakada, N
Egawa, T
Jimbo, T
Umeno, M
机构
[1] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Nagoya, Aichi 4668555, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 5A期
关键词
GaN; Si substrate; meltback etching; MOCVD; intermediate layer;
D O I
10.1143/JJAP.38.L492
中图分类号
O59 [应用物理学];
学科分类号
摘要
A single crystal GaN thin film was successfully frown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meltback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.
引用
收藏
页码:L492 / L494
页数:3
相关论文
共 15 条
[1]   GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].
AKIYAMA, M ;
KAWARADA, Y ;
KAMINISHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845
[2]   LOW-THRESHOLD CONTINUOUS-WAVE ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS/GAAS SINGLE QUANTUM-WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES WITH SIO2 BACK COATING [J].
EGAWA, T ;
TADA, H ;
KOBAYASHI, Y ;
SOGA, T ;
JIMBO, T ;
UMENO, M .
APPLIED PHYSICS LETTERS, 1990, 57 (12) :1179-1181
[3]  
EGAWA T, 1990, APPL PHYS LETT, V58, P1265
[4]   GROWTH-MECHANISM OF GAN GROWN ON SAPPHIRE WITH ALN BUFFER LAYER BY MOVPE [J].
HIRAMATSU, K ;
ITOH, S ;
AMANO, H ;
AKASAKI, I ;
KUWANO, N ;
SHIRAISHI, T ;
OKI, K .
JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :628-633
[5]   Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient [J].
Ishikawa, H ;
Nakamura, K ;
Egawa, T ;
Jimbo, T ;
Umeno, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (1AB) :L7-L9
[6]   Thermal stability of GaN on (111) Si substrate [J].
Ishikawa, H ;
Yamamoto, K ;
Egawa, T ;
Soga, T ;
Jimbo, T ;
Umeno, M .
JOURNAL OF CRYSTAL GROWTH, 1998, 189 :178-182
[7]   Selective area growth of GaN on Si substrate using SiO2 mask by metalorganic vapor phase epitaxy [J].
Kawaguchi, Y ;
Honda, Y ;
Matsushima, H ;
Yamaguchi, M ;
Hiramatsu, K ;
Sawaki, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (8B) :L966-L969
[8]   Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer [J].
Kobayashi, NP ;
Kobayashi, JT ;
Choi, WJ ;
Dapkus, PD ;
Zhang, XG ;
Rich, DH .
JOURNAL OF CRYSTAL GROWTH, 1998, 189 :172-177
[9]   INSITU MONITORING OF GAN GROWTH USING INTERFERENCE EFFECTS [J].
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1620-1627
[10]  
NOTO N, 1989, MATER RES SOC S P, V148, P248