Molecular beam epitaxy growth and optical properties of AlN nanowires

被引：45
|
作者：
Landre, O. [1 ,2 ]
Fellmann, V. [1 ,2 ]
Jaffrennou, P. [1 ,2 ]
Bougerol, C. [1 ,2 ]
Renevier, H. [3 ]
Cros, A. [4 ]
Daudin, B. [1 ,2 ]
机构：
[1] Univ Grenoble 1, CNRS, Inst Neel, CEA CNRS Grp, F-38054 Grenoble, France
[2] CEA Grenoble, INAC, SP2M, F-38054 Grenoble, France
[3] Grenoble INP MINATEC, Mat & Genie Phys Lab, F-38016 Grenoble, France
[4] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 06期
关键词：
aluminium compounds; elasticity; III-V semiconductors; molecular beam epitaxial growth; nanofabrication; nanowires; photoluminescence; plasma deposition; Raman spectra; semiconductor growth; semiconductor quantum wires; stress relaxation; transmission electron microscopy; wide band gap semiconductors; ALUMINUM NITRIDE; INTERFACE;
D O I：
10.1063/1.3315943
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of catalyst-free AlN nanowires has been achieved by plasma-assisted molecular beam epitaxy on SiO2/Si (100), by taking advantage of Volmer-Weber growth mode of AlN on amorphous SiO2. Using a combination of high resolution transmission electron microscopy and Raman spectroscopy, it is found that AlN nanowires are completely relaxed, which has been assigned to the compliant character of SiO2. Elastic strain relaxation of AlN nanowires has been further confirmed by photoluminescence experiments, showing in addition that spectra are dominated by near-band edge emission.
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页数：3
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