Strongly enhanced exciton-phonon coupling in two-dimensional WSe2

被引:34
作者
Du, Luojun [1 ,2 ]
Liao, Mengzhou [1 ]
Tang, Jian [1 ]
Zhang, Qian [2 ]
Yu, Hua [1 ]
Yang, Rong [1 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [3 ]
Shi, Dongxia [1 ,4 ,5 ]
Zhang, Qingming [1 ,2 ]
Zhang, Guangyu [1 ,4 ,5 ,6 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China
[3] Natl Inst Mat Sci, Adv Mat Lab, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[4] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China
[5] Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China
[6] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China
基金
美国国家科学基金会;
关键词
RAMAN-SCATTERING; MONOLAYER MOS2; BULK; PHOTOLUMINESCENCE; WS2; IDENTIFICATION; DYNAMICS; LAYERS; 2D;
D O I
10.1103/PhysRevB.97.235145
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The recently emerging laminar transition metal dichalcogenides provide an unprecedented platform for exploring fascinating layer-dependent properties. Determining the dependence of exciton-phonon coupling (EPC) on dimensionality would set a foundation for these exotic thickness-dependent phenomena. Here we report the observation of layer-dependent EPC between the A(1g) (Gamma) phonon and A' exciton in WSe2 down to the monolayer limit. Our results uncover that the strength of EPC increases dramatically with a descent of layer thickness. Compared with their bulk counterparts, the strength of EPC in monolayer WSe2 is enhanced by nearly an order of magnitude. Furthermore, our work demonstrates that the giant EPC in the monolayer plays a prominent role in the exotic interlayer EPC of WSe2/boron nitride heterostructures. The gigantic EPC in the two-dimensional limit provides a firm basis for understanding and manipulating the peculiar phenomena and novel optoelectronic applications based on atomically thin WSe2.
引用
收藏
页数:7
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