Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs

被引：2

作者：

Mori, Takayuki ^{[1
]}

Ida, Jiro ^{[1
]}

Inoue, Shota ^{[1
]}

Yoshida, Takahiro ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Div Elect Engn, Nonoichi, Ishikawa 9218501, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2018年 / E101C卷 / 05期

关键词：

SOI; steep subthreshold slope; floating body effect; feedback; hysteresis; MOSFETS;

D O I：

10.1587/transele.E101.C.334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly proposed PN-body-tied structures. We found that the hysteresis widths of the PN-body-tied structures are smaller than that of the conventional floating body and body-tied structures; this means that they are feasible for switching devices. Detailed characterizations of the hysteresis widths of each device are also reported in the study, such as dependency on the gate length and the impurity concentration.

引用

页码：334 / 337

页数：4

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