Metal layer mask patterning by force microscopy lithography

被引:26
作者
Fonseca, HD
Maurício, MHP
Ponciano, CR
Prioli, R
机构
[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22452970 Rio De Janeiro, Brazil
[2] Pontificia Univ Catolica Rio de Janeiro, Dept Ciencia Mat & Met, BR-22452970 Rio De Janeiro, Brazil
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 112卷 / 2-3期
关键词
nano-lithography; masking in lithography; nano-structures; atomic force microscopy;
D O I
10.1016/j.mseb.2004.05.031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nano-lithography of a metallic surface in air by atomic force microscopy while operated in contact mode and equipped with a diamond tip is presented. The aluminum mask was prepared by thermal deposition on arsenic sulfide films. The analysis of the scratches performed by the tip on the metallic mask show that the depth of the lithographed pattern increases with the increase of the applied normal force. The scanning velocity is also shown to influence the AFM patterning process. As the scanning velocity increases, the scratch depth and width decreases. Nano-indentations performed with the diamond tip show that the plastically deformed surface increases with the increase of the duration of the applied force. The use of the nano-lithography method to create nano-structures is discussed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:194 / 199
页数:6
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