Nucleation of the C40-to-C11b transformation in magnetron-sputtered MoSi2 thin films

被引：1

作者：

Wang, XY

Chang, ITH

Aindow, M ^{[1
]}

机构：

[1] Univ Connecticut, Inst Mat Sci, Dept Met & Mat Engn, Storrs, CT 06269 USA

[2] Univ Birmingham, Sch Met & Mat, Birmingham B15 2TT, W Midlands, England

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2002年 / 82卷 / 12期

关键词：

D O I：

10.1080/0950083021000038083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transmission electron microscopy has been used to reveal the microstructure of metastable C40 MOSi2 thin films produced by annealing amorphous magnetron-sputtered deposits at 700degreesC. The films contain nanoscale acicular grains elongated parallel to (0001), with extensive basal faulting. The faults are intrinsic with R = 13[0001] and correspond to thin slabs of the equilibrium C11(b) phase. It is proposed that these faults may act as nuclei for the subsequent transformation from C40 to C11(b) by a process akin to discontinuous coarsening.

引用

页码：687 / 694

页数：8

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