Farfield Under Small Scattering Angle in the Rectangular Ag-Si-SiO2 Cavity

被引：2

作者：

Li, Shu ^{[1
]}

Zou, Yang ^{[1
]}

Liu, Huang-qing ^{[1
]}

Chong, Shu-gui ^{[1
]}

Xiao, Yan-ping ^{[1
]}

Wen, Li-qun ^{[1
]}

机构：

[1] Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China

来源：

PLASMONICS | 2019年 / 14卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Farfield; Small scattering angle; Ag-Si-SiO2; Rectangular cavity; MIXED NEAR-FIELD; SURFACE; LOCALIZATION; GRAPHENE;

D O I：

10.1007/s11468-019-00928-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, the farfield under small scattering angle was investigated in the rectangular Ag-Si-SiO2 cavity by FDTD. The simulation results showed that Re(E) of the farfield was related to the monitoring wavelength and was a function of monitoring wavelengths. Moreover, in the rectangular Ag-Si-SiO2 cavity, the amplitude of Re(E) changed as the silicon height d varied, and maximum amplitude A of Re(E) could be approximated as the functions of transverse length l and thickness t of silver film under small scattering angle. Re(E) was independent of the transverse length w(2) and the longitudinal length d of the cavity in RCM and was also irrelevant with the dielectric constant of silver films. The amplitude A of Re(E) increased as l and t of silver film increased.

引用

页码：1385 / 1392

页数：8

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