Nanoporous thin films with controllable nanopores processed from vertically aligned nanocomposites

被引:13
作者
Bi, Zhenxing [1 ]
Anderoglu, Osman [2 ]
Zhang, Xinghang [2 ]
MacManus-Driscoll, Judith L. [3 ]
Yang, Hao [4 ]
Jia, Quanxi [4 ]
Wang, Haiyan [1 ]
机构
[1] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
[2] Texas A&M Univ, Dept Mech Engn, College Stn, TX 77843 USA
[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[4] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
基金
美国国家科学基金会;
关键词
OXIDE FUEL-CELL; ANODIC ALUMINA FILMS; POROUS SILICON; ION BATTERY; PHASE; NANOSTRUCTURES; GROWTH; SENSOR; AL; ELECTROLYTE;
D O I
10.1088/0957-4484/21/28/285606
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Porous thin films with ordered nanopores have been processed by thermal treatment on vertically aligned nanocomposites (VAN), e. g., (BiFeO3)(0.5):(Sm2O3)(0.5) VAN thin films. Uniformly distributed nanopores with an average diameter of 60 nm and 150 nm were formed at the bottom and top of the nanoporous films, respectively. Controllable porosity can be achieved by adjusting the microstructure of VAN (BiFeO3):(Sm2O3) thin films and the annealing parameters. In situ heating experiments within a transmission electron microscope (TEM) column at temperatures from 25 to 850 degrees C, provides significant insights into the phase transformation, evaporation and structure reconstruction during the annealing. The in situ experiments also demonstrate the possibility of processing vertically aligned nanopores (VANP) with one phase stable in a columnar structure. These nanoporous thin films with controllable pore size and density could be promising candidates for thin film membranes and catalysis for fuel cell and gas sensor applications.
引用
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页数:7
相关论文
共 34 条
  • [1] Sm2S3-Sm2O3 phase diagram
    Andreev, O. V.
    Vysokikh, A. S.
    Vaulin, V. G.
    [J]. RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2008, 53 (08) : 1320 - 1324
  • [2] Hydrogen Sensor Made of Porous Silicon and Covered by TiO2-x or ZnO ⟨Al⟩ Thin Film
    Aroutiounian, Vladimir
    Arakelyan, Valeri
    Galstyan, Vardan
    Martirosyan, Khachatur
    Soukiassian, Patrick
    [J]. IEEE SENSORS JOURNAL, 2009, 9 (1-2) : 9 - 12
  • [3] Tunable lattice strain in vertically aligned nanocomposite (BiFeO3)x:(Sm2O3)1-x thin films
    Bi, Zhenxing
    Lee, Joon Hwan
    Yang, Hao
    Jia, Quanxi
    MacManus-Driscoll, Judith L.
    Wang, Haiyan
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (09)
  • [4] Electrochemical deposition of porous Co3O4 nanostructured thin film for lithium-ion battery
    Chou, Shu-Lei
    Wang, Jia-Zhao
    Liu, Hua-Kun
    Dou, Shi-Xue
    [J]. JOURNAL OF POWER SOURCES, 2008, 182 (01) : 359 - 364
  • [5] Corbin SF, 2009, J AM CERAM SOC, V92, P331, DOI [10.1111/j.1551-2916.2008.02889.x, 10.1111/J.1551-2916.2008.02889.X]
  • [6] High performance Ni-Sm2O3 cermet anodes for intermediate-temperature solid oxide fuel cells
    Ding, Dong
    Li, Lei
    Feng, Kai
    Liu, Zhangbo
    Xia, Changrong
    [J]. JOURNAL OF POWER SOURCES, 2009, 187 (02) : 400 - 402
  • [7] Electrochemical oxidation of Mn/MnO films: Mechanism of porous film growth
    Djurfors, B
    Broughton, JN
    Brett, MJ
    Ivey, DG
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (01) : A64 - A68
  • [8] Surface precipitation of highly porous hydrotalcite-like film on Al from a zinc aqueous solution
    Gao, YF
    Nagai, A
    Masuda, Y
    Sato, F
    Seo, WS
    Koumoto, K
    [J]. LANGMUIR, 2006, 22 (08) : 3521 - 3527
  • [9] Comprehensive chemistry designs in porous SiOCH film stacks and plasma etching gases for damageless Cu interconnects in advanced ULSI devices
    Hayashi, Yoshihiro
    Ohtake, Hiroto
    Kawahara, Jun
    Tada, Munehiro
    Saito, Shinobu
    Inoue, Naoya
    Ito, Fuminori
    Tagami, Masayoshi
    Ueki, Makoto
    Furutake, Naoya
    Takeuchi, Tsuneo
    Yamamoto, Hironori
    Abe, Mari
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2008, 21 (03) : 469 - 480
  • [10] Houser JE, 2009, NAT MATER, V8, P415, DOI [10.1038/nmat2423, 10.1038/NMAT2423]