Core level photoelectron spectroscopy of LiGaS2 and Ga-S bonding in complex sulfides

被引：43
作者：
Atuchin, V. V. [1 ]
Isaenko, L. I. [2 ]
Kesler, V. G. [3 ]
Lobanov, S. I. [2 ]
机构：
[1] SB RAS, Lab Opt Mat & Struct, Inst Semicond Phys, Novosibirsk 630090 90, Russia
[2] SB RAS, Lab Crystal Growth, Inst Geol & Mineral, Novosibirsk 630090 90, Russia
[3] SB RAS, Lab Phys Bases Integrated Microelect, Inst Semicond Phys, Novosibirsk 630090 90, Russia
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 497卷 / 1-2期
关键词：
Optical materials; Crystal growth; Electronic properties; XPS; Bonding; OPTICAL FREQUENCY-CONVERSION; ELECTRONIC-STRUCTURE; CRYSTAL-STRUCTURE; MIXED-CRYSTALS; COMPOSITION RATIO; GALLIUM SULFIDE; RHEED ANALYSIS; STATES; PARAMETERS; AGGAS2;
D O I：
10.1016/j.jallcom.2010.03.020
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electronic parameters of the lithium thiogallate LiGaS2 have been evaluated by X-ray photoelectron spectroscopy (XPS) Spectral features of all constituent element core levels and Auger lines have been considered. The Ga-S bonding effects in Ga-bearing sulfide crystals have been discussed using binding energy difference Delta(2p)(S-Ga) = BE(S 2p) - BE(Ga 3d) as a representative parameter to quantify the valence electron shift from gallium to sulfur atoms The value Delta(2p)(S-Ga) = 141 9 eV found for LiGaS2 is very close to that evaluated for AgGaS2 This relation is an indicator of closely coincident ionicity of Ga-S bonds in LiGaS2 and AgGaS2. (C) 2010 Elsevier B V All rights reserved
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页码：244 / 248
页数：5
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