Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications

被引:2
作者
Anusuya, P. [1 ]
Kumar, Prashanth [1 ]
Esakki, Papanasam [1 ]
Agarwal, Lucky [1 ]
机构
[1] VIT Chennai Univ, Sch Elect, Microelect & VLSI Design Grp, Chennai 600127, Tamil Nadu, India
关键词
Schottky; Biomolecules; Biosensors; Numerical simulation; LABEL-FREE DETECTION; ELECTROCHEMICAL BIOSENSORS; THRESHOLD-VOLTAGE; IMPACT; FET; PERFORMANCE; MOSFET; CHANNEL; FABRICATION; DNA;
D O I
10.1007/s12633-022-01828-y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the charged and neutral charged biomolecules such as protein, nucleic acids, antibody agents and viruses. Due to these highly sensitive biosensor devices, we mainly focused on schottky tunnel field-effect transistors (STFET), these transistors have unique properties such as enhanced transconductance and gate controllability, low leakage current etc. In addition, we studied the performances and challenges of STFET by dielectric modulation doping concentration, dielectric modulation, and heterostructure devices. Further, we have reviewed the comparison of STFET and conventional devices. This article reviews mainly on the study of high sensitivity analysis of STFET and modified Schottky-TFET structures for the use of biosensing applications.
引用
收藏
页码:10187 / 10198
页数:12
相关论文
共 89 条
[1]   A Review of Carbon Nanotubes Field Effect-Based Biosensors [J].
Alabsi, S. S. ;
Ahmed, Abdelaziz Yousif ;
Dennis, J. O. ;
Khir, M. H. Md ;
Algamili, A. S. .
IEEE ACCESS, 2020, 8 :69509-69521
[2]   Microcantilever-based platforms as biosensing tools [J].
Alvarez, Mar ;
Lechuga, Laura M. .
ANALYST, 2010, 135 (05) :827-836
[3]   Performance Evaluation of a Novel GAA Schottky Junction (GAASJ) TFET with Heavily Doped Pocket [J].
Bagga, Navjeet ;
Kumar, Anil ;
Bhattacharjee, A. ;
Dasgupta, S. .
SUPERLATTICES AND MICROSTRUCTURES, 2017, 109 :545-552
[4]   MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts [J].
Balaji, Yashwanth ;
Smets, Quentin ;
Szabo, Aron ;
Mascaro, Marco ;
Lin, Dennis ;
Asselberghs, Inge ;
Radu, Iuliana ;
Luisier, Mathieu ;
Groeseneken, Guido .
ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (04)
[5]   Sputtering Physical Vapour Deposition (PVD) Coatings: A Critical Review on Process Improvement and Market Trend Demands [J].
Baptista, Andresa ;
Silva, Francisco ;
Porteiro, Jacobo ;
Miguez, Jose ;
Pinto, Gustavo .
COATINGS, 2018, 8 (11)
[6]  
BISWAS A, 2021, SILICON-NETH
[7]   2D analytical modeling and simulation of dual material DG MOSFET for biosensing application [J].
Buvaneswari, B. ;
Balamurugan, N. B. .
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2019, 99 :193-200
[8]   Novel charge plasma based dielectric modulated impact ionization MOSFET as a biosensor for label-free detection [J].
Chanda, Manash ;
Dey, Prithu ;
De, Swapnadip ;
Sarkar, Chandan Kumar .
SUPERLATTICES AND MICROSTRUCTURES, 2015, 86 :446-455
[9]   A novel Ge based overlapping gate dopingless tunnel FET with high performance [J].
Chen, Shupeng ;
Liu, Hongxia ;
Wang, Shulong ;
Han, Tao ;
Li, Wei ;
Wang, Xing .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (10)
[10]   Optical biosensors based on refractometric sensing schemes: A review [J].
Chen, Yangyang ;
Liu, Jinchuan ;
Yang, Zhenchuan ;
Wilkinson, James S. ;
Zhou, Xiaohong .
BIOSENSORS & BIOELECTRONICS, 2019, 144