High Frequency Characterization and Modeling of High Density TSV in 3D Integrated Circuits

被引：0
|
作者：
Bermond, C. [1 ]
Cadix, L. [1 ,2 ]
Farcy, A. [2 ]
Lacrevaz, T. [1 ]
Leduc, P. [3 ]
Flechet, B. [1 ]
机构：
[1] Univ Savoie, CNRS, IMEP LAHC, UMR 5130, F-73376 Le Bourget Du Lac, France
[2] STMicroelect, F-38926 Crolles, France
[3] CEA LETI Minatec, F-38054 Grenoble 9, France
来源：
2009 IEEE WORKSHOP ON SIGNAL PROPAGATION ON INTERCONNECTS | 2009年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
High frequency characterization and modeling of Through Silicon Vias (TSVs) for new 3D chip staking are presented in this paper. Works focus on high density TSVs, up to 10(6) cm(-2), with pitch below 10 mu m and aggressive wafer thinning to maintain TSV aspect ratio in a range between 5 and 10. Equivalent electrical RLCG models of TSVs with height of 15 mu m and diameter of 3 mu m are extracted up to 20 GHz. It is shown that values extracted for components are directly related to design and material characteristics used to process 3D TSVs.
引用
收藏
页码：25 / +
页数：2
相关论文
共 50 条
  • [41] Analysis of TSV-to-TSV Coupling with High-Impedance Termination in 3D ICs
    Song, Taigon
    Liu, Chang
    Kim, Dae Hyun
    Lim, Sung Kyu
    Cho, Jonghyun
    Kim, Joohee
    Pak, Jun So
    Ahn, Seungyoung
    Kim, Joungho
    Yoon, Kihyun
    2011 12TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED), 2011, : 122 - 128
  • [42] An Unbalanced Area Ratio Study for High Performance Monolithic 3D Integrated Circuits
    Sarhan, Hossam
    Thuries, Sebastien
    Billoint, Olivier
    Clermidy, Fabien
    2015 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, 2015, : 350 - 355
  • [43] Design, Fabrication and Characterization of TSV Interposer Integrated 3D Capacitor for SIP Applications
    Li, Jiwei
    Ma, Shenglin
    Liu, Huan
    Guan, Yong
    Chen, Jing
    Jin, Yufeng
    Wang, Wei
    Hu, Liulin
    He, Shuwei
    2018 IEEE 68TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2018), 2018, : 1974 - 1980
  • [44] Novel Crack Sensor for TSV-based 3D Integrated Circuits: Design and Deployment Perspectives
    Zhang, Chun
    Jung, Moongon
    Lim, Sung Kyu
    Shi, Yiyu
    2013 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD), 2013, : 371 - 378
  • [45] Development and characterisation of high electrical performances TSV for 3D applications
    Henry, D.
    Cheramy, S.
    Charbonnier, J.
    Chausse, P.
    Neyret, M.
    Garnier, G.
    Brunet-Manquat, C.
    Verrun, S.
    Sillon, N.
    Bonnot, L.
    Farcy, A.
    Cadix, L.
    Rousseau, M.
    Saugier, E.
    2009 11TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC 2009), 2009, : 528 - +
  • [46] Thermal Analysis and Modeling of 3D Integrated Circuits for Test Scheduling
    Rawat, Indira
    Gupta, M. K.
    Singh, Virendra
    2013 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC), 2013,
  • [47] GTL High Speed I/O in 3D ICs for TSV and Interconnect Signal Integrity Characterization
    Baek, Hyunho
    Harb, Shadi
    Eisenstadt, William R.
    2012 IEEE 62ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2012, : 844 - 850
  • [48] An Overview of 3D Integrated Circuits
    Kumar, Vachan
    Naeemi, Azad
    2017 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION FOR RF, MICROWAVE, AND TERAHERTZ APPLICATIONS (NEMO), 2017, : 311 - 313
  • [49] Monolithic 3D integrated circuits
    Wong, Simon
    El-Gamal, Abbas
    Griffin, Peter
    Nishi, Yoshio
    Pease, Fabian
    Plummer, James
    2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 66 - +
  • [50] Advances in 3D Integrated Circuits
    Patti, Robert
    ISPD 11: PROCEEDINGS OF THE 2011 ACM/SIGDA INTERNATIONAL SYMPOSIUM ON PHYSICAL DESIGN, 2011, : 79 - 79
12345