Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

被引：85
作者：
Fina, Ignasi [1 ]
Sanchez, Florencio [1 ]
机构：
[1] ICMAB, Inst Ciencia Mat Barcelona, CSIC, Bellaterra 08193, Spain
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2021年 / 3卷 / 04期
关键词：
ferroelectric thin films; ferroelectric HfO2; Hf0.5Zr0.5O2; epitaxial oxides; ferroelectric memories; ferroelectric reliability; epitaxial oxides on silicon; HF0.5ZR0.5O2; THIN-FILMS; HAFNIUM OXIDE; MECHANISM; FIELD; STABILIZATION; HETEROEPITAXY; INTERFACE; ENDURANCE; BEHAVIOR; SILICON;
D O I：
10.1021/acsaelm.1c00110
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest in this material and ferroelectric oxides are once again in the spotlight of the memories industry. Great efforts are being made to understand and control ferroelectric properties. Epitaxial films, which have fewer defects and a more controlled microstructure than polycrystalline films, can be very useful for this purpose. Epitaxial films of ferroelectric HfO2 have been much less investigated, but after the first report in 2015 significant progress has been achieved. This review summarizes and discusses the main advances on epitaxial HfO2, considering growth, study of structural and ferroelectric properties, identification of the ferroelectric phase, and fabrication of devices. We hope this review will help researchers investigating epitaxial HfO2. It can also help extend the interest of the ferroelectric HfO2 community, now basically focused on polycrystalline samples, to epitaxial films.
引用
收藏
页码：1530 / 1549
页数：20
相关论文
共 127 条
[1]   Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2 [J].
Adkins, J. W. ;
Fina, I. ;
Sanchez, F. ;
Bakaul, S. R. ;
Abiade, J. T. .
APPLIED PHYSICS LETTERS, 2020, 117 (14)
[2]   High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty [J].
Ali, T. ;
Polakowski, P. ;
Riedel, S. ;
Buettner, T. ;
Kaempfe, T. ;
Rudolph, M. ;
Paetzold, B. ;
Seidel, K. ;
Loehr, D. ;
Hoffmann, R. ;
Czernohorsky, M. ;
Kuehnel, K. ;
Steinke, P. ;
Calvo, J. ;
Zimmermann, K. ;
Mueller, J. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (09) :3769-3774
[3]   Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration [J].
Batra, Rohit ;
Tran Doan Huan ;
Rossetti, George A., Jr. ;
Ramprasad, Rampi .
CHEMISTRY OF MATERIALS, 2017, 29 (21) :9102-9109
[4]   Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study [J].
Batra, Rohit ;
Tran Doan Huan ;
Jones, Jacob L. ;
Rossetti, George, Jr. ;
Ramprasad, Rampi .
JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (08) :4139-4145
[5]   Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films [J].
Begon-Lours, Laura ;
Mulder, Martijn ;
Nukala, Pavan ;
de Graaf, Sytze ;
Birkholzer, Yorick A. ;
Kooi, Bart ;
Noheda, Beatriz ;
Koster, Gertjan ;
Rijnders, Guus .
PHYSICAL REVIEW MATERIALS, 2020, 4 (04)
[6]   Metal oxide resistive memory switching mechanism based on conductive filament properties [J].
Bersuker, G. ;
Gilmer, D. C. ;
Veksler, D. ;
Kirsch, P. ;
Vandelli, L. ;
Padovani, A. ;
Larcher, L. ;
McKenna, K. ;
Shluger, A. ;
Iglesias, V. ;
Porti, M. ;
Nafria, M. .
JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
[7]  
Böscke TS, 2011, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
[8]   Phase transitions in ferroelectric silicon doped hafnium oxide [J].
Boescke, T. S. ;
Teichert, St. ;
Braeuhaus, D. ;
Mueller, J. ;
Schroeder, U. ;
Boettger, U. ;
Mikolajick, T. .
APPLIED PHYSICS LETTERS, 2011, 99 (11)
[9]   Ferroelectricity in hafnium oxide thin films [J].
Boescke, T. S. ;
Mueller, J. ;
Braeuhaus, D. ;
Schroeder, U. ;
Boettger, U. .
APPLIED PHYSICS LETTERS, 2011, 99 (10)
[10]   Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films [J].
Bouaziz, Jordan ;
Romeo, Pedro Rojo ;
Baboux, Nicolas ;
Vilquin, Bertrand .
ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (09) :1740-1745
12345678910