Optical and electrical properties of amorphous Si1-x C x :H films

被引：2

作者：

Najafov, B. A. ^{[1
]}

Isakov, G. I. ^{[2
]}

机构：

[1] Azerbaijan Acad Sci, Inst Radiat Res, AZ-1143 Baku, Azerbaijan

[2] Azerbaijan Acad Sci, Inst Phys, AZ-1143 Baku, Azerbaijan

来源：

INORGANIC MATERIALS | 2010年 / 46卷 / 06期

关键词：

SPECTROSCOPY; GERMANIUM;

D O I：

10.1134/S0020168510060129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the optical and electrical properties of a-Si:H and a-Si1 - x C (x) :H (x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H bonds and the hydrogen concentration in the films. The activation energy for conduction and the carrier mobility in the films are determined from the temperature dependence of their electrical conductivity.

引用

页码：624 / 630

页数：7

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