Spatial uniformity of the mechanical properties of 3C-SiC films grown on 4-inch Si wafers as a function of film growth conditions

This paper investigates the areal uniformity of the mechanical properties of 3C-SiC films grown on 4-inch (100) Si wafers by two growth recipes at different temperatures. Using an interferometric load-deflection technique performed on bulk-micromachined diaphragms, the residual stress and Young's modulus were measured at numerous locations on each wafer. In general, the higher precursor gas flow rates produce films with lower residual stresses than lower now rates. Additionally, at higher growth temperatures, high flow rates yield films with a higher Young's modulus than low now rates. At lower temperatures, the Young's moduli are nearly equal for high and low flow rates, and the residual stresses are larger than at higher growth temperatures.