(AlxGa1-x)0.5In0.5P barrier layer grown by gas source molecular beam epitaxy for V-band (AlxGa1-x)0.5In0.5P/In0.2Ga0.8As/GaAs power pseudomorphic HEMT

被引：0

作者：

Zaknoune, M ^{[1
]}

Schuler, O ^{[1
]}

Wallart, X ^{[1
]}

Piotrowicz, S ^{[1
]}

Mollot, F ^{[1
]}

Théron, D ^{[1
]}

Crosnier, Y ^{[1
]}

机构：

[1] Univ Lille 1, CNRS, UMR 8520, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the design, fabrication and for the first time power characterization in V-band of (Al,Ga)InP/InGaAs/GaAs power Pseudomorphic High Electron Mobility Transistors grown by Gas Source Molecular Beam Epitaxy, The GaInP/InGaAs/GaAs, AlGaInP/InGaAs/GaAs, AlInP/InGaAs/GaAs Pseudomorphic HEMT structures have been studied from the point of view of the growth as well as the technological process. For the three barrier materials, 0.1x100-mu m(2) T-gate devices were characterized in small signal and large signal conditions at 60 GHz. The best of them, the single side doped GaInP/InGaAs/GaAs structure exhibit an impressive current density of 780 mA/mm, a transconductance of 700 mS/mm and a cut-off frequency of 120 GHz. Power characterizations have been performed at 60 GHz. The Ga0.5In0.5P/In0.2Ga0.8As/GaAs device has demonstrated a maximum output power density of 560 mW/mm.

引用

页码：353 / 356

页数：4

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