Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO2 Nanobeam

被引：194

作者：

Zhang, Shixiong ^{[1
]}

Chou, Jung Yen ^{[1
]}

Lauhon, Lincoln J. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 12期

关键词：

MOTT TRANSITION; OPTICAL-PROPERTIES; THIN-FILMS; PEIERLS; HUBBARD; VIEW; OXIDES;

D O I：

10.1021/nl9028973

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electrical resistance of single VO2 nanobeams was measured while simultaneously mapping the domain structure with Raman spectroscopy to investigate the relationship between structural domain formation and the metal-insulator transition. With increasing temperature, the nanobeams transformed from the insulating monoclinic M-1 phase to a mixture of the Mott-insulating M-2 and metallic rutile phases. Domain fractions were used to extract the temperature dependent resistivity of the M-2 phase, which showed an activated behavior consistent with the expected Mott-Hubbard gap. Metallic monoclinic phases were also produced by direct injection of charge into devices, decoupling the Mott metal-insulator transition from the monoclinic to rutile structural phase transition.

引用

页码：4527 / 4532

页数：6

共 43 条

[1] Evidence of a pressure-induced metallization process in monoclinic VO2 [J].

Arcangeletti, E. ;

Baldassarre, L. ;

Di Castro, D. ;

Lupi, S. ;

Malavasi, L. ;

Marini, C. ;

Perucchi, A. ;

Postorino, P. .

PHYSICAL REVIEW LETTERS, 2007, 98 (19)

[2] Nanostructure-dependent metal-insulator transitions in vanadium-oxide nanowires [J].

Baik, Jeong Min ;

Kim, Myung Hwa ;

Larson, Christopher ;

Wodtke, Alec M. ;

Moskovits, Martin .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (35) :13328-13331

[3]

CAO J, J NAT NANOTECHNOL, DOI DOI 10.1038/NNANO.2009.266

[4] INFLUENCE OF ION-BEAM PARAMETERS ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ION-ASSISTED REACTIVELY EVAPORATED VANADIUM DIOXIDE THIN-FILMS [J].

CASE, FC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1762-1766

[5] Vanadium oxide nanowire phase and orientation analyzed by Raman spectroscopy [J].

Chou, J. Y. ;

Lensch-Falk, J. L. ;

Hemesath, E. R. ;

Lauhon, L. J. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)

[6] Confocal Raman Microscopy across the Metal-Insulator Transition of Single Vanadium Dioxide Nanoparticles [J].

Donev, Eugenii U. ;

Lopez, Rene ;

Feldman, Leonard C. ;

Haglund, Richard F., Jr. .

NANO LETTERS, 2009, 9 (02) :702-706

[7]

Gebhard F., 1997, The Mott Metal-Insulator Transition

[8] Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams [J].

Gu, Qian ;

Falk, Abram ;

Wu, Junqiao ;

Lian Ouyang ;

Park, Hongkun .

NANO LETTERS, 2007, 7 (02) :363-366

[9] Single-crystalline vanadium dioxide nanowires with rectangular cross sections [J].

Guiton, BS ;

Gu, Q ;

Prieto, AL ;

Gudiksen, MS ;

Park, H .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (02) :498-499

[10] Orbital-assisted metal-insulator transition in VO2 -: art. no. 196404 [J].

Haverkort, MW ;

Hu, Z ;

Tanaka, A ;

Reichelt, W ;

Streltsov, SV ;

Korotin, MA ;

Anisimov, VI ;

Hsieh, HH ;

Lin, HJ ;

Chen, CT ;

Khomskii, DI ;

Tjeng, LH .

PHYSICAL REVIEW LETTERS, 2005, 95 (19)

← 1 2 3 4 5 →