Unidirectional Threshold Switching Induced by Cu Migration with High Selectivity and Ultralow OFF Current under Gradual Electroforming Treatment

被引：20

作者：

Dananjaya, Putu A. ^{[1
]}

Loy, Desmond J. J. ^{[1
]}

Chow, Samuel C. W. ^{[1
]}

Lew, Wen Siang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, 21 Nanyang Link, Singapore 637371, Singapore

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2019年 / 1卷 / 10期

关键词：

threshold switching; diffusive memristor; nucleation theory; Rayleigh instability; random telegraph signal; CONDUCTIVE FILAMENT; SELECTOR; NANOFILAMENT; PLASTICITY;

D O I：

10.1021/acsaelm.9b00446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A gradual electroforming process was implemented on the pristine Pt/HfOx/Cu/Pt structure to realize volatile threshold switching characteristics of a diffusive memristor. The reported devices exhibit stable unidirectional threshold switching properties with high selectivity of >10(7) and ultralow OFF current of similar to 100 fA for over 10(4) endurance cycles. Nucleation theory on spheroidal-shaped metallic filament growth is used to extensively discuss the structural changes of the device after gradual forming treatments by analyzing the applied bias amplitude dependency of the finite delay time required by the device to turn ON under external electric field. On the other hand, the Rayleigh instability model was implemented for the aforementioned spheroidal metallic nucleus to explain the relaxation dynamics of the device. It was shown that the relaxation time of the device depends on the initial profile of the nucleus within the insulating layer. The broadening of the ON current distribution of the device was observed during the device endurance test. This is correlated to the presence of a random telegraph signal (RTS) during the ON state of the device.

引用

页码：2076 / 2085

页数：19

共 56 条

[1] Nanosecond threshold switching of GeTe6 cells and their potential as selector devices [J].

Anbarasu, M. ;

Wimmer, Martin ;

Bruns, Gunnar ;

Salinga, Martin ;

Wuttig, Matthias .

APPLIED PHYSICS LETTERS, 2012, 100 (14)

[2] High-performance quantum ring detector for the 1-3 terahertz range [J].

Bhowmick, S. ;

Huang, G. ;

Guo, W. ;

Lee, C. S. ;

Bhattacharya, P. ;

Ariyawansa, G. ;

Perera, A. G. U. .

APPLIED PHYSICS LETTERS, 2010, 96 (23)

[3]

Bricalli A, 2016, INT EL DEVICES MEET

[4]

Burr G. W., 2012, 2012 IEEE Symposium on VLSI Technology, P41, DOI 10.1109/VLSIT.2012.6242451

[5]

Chai Z., 2016, 2016 IEEE S VLSI TEC, P1

[6] RTN in GexSe1-x OTS selector devices [J].

Chai, Zheng ;

Zhang, Weidong ;

Degraeve, Robin ;

Zhang, Jian Fu ;

Marsland, John ;

Fantini, Andrea ;

Garbin, Daniele ;

Clima, Sergiu ;

Goux, Ludovic ;

Kar, Gouri Sankar .

MICROELECTRONIC ENGINEERING, 2019, 215

[7] Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells [J].

Chen, W. ;

Barnaby, H. J. ;

Kozicki, M. N. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (05) :580-583

[8] Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells [J].

Du, Gang ;

Wang, Chao ;

Li, Hongxia ;

Mao, Qinan ;

Ji, Zhenguo .

AIP ADVANCES, 2016, 6 (08)

[9] Highly-Scalable Novel Access Device based on Mixed Ionic Electronic Conduction (MIEC) Materials for High Density Phase Change Memory (PCM) Arrays [J].

Gopalakrishnan, K. ;

Shenoy, R. S. ;

Rettner, C. T. ;

Virwani, K. ;

Bethune, D. S. ;

Shelby, R. M. ;

Burr, G. W. ;

Kellock, A. ;

King, R. S. ;

Nguyen, K. ;

Bowers, A. N. ;

Jurich, M. ;

Jackson, B. ;

Friz, A. M. ;

Topuria, T. ;

Rice, P. M. ;

Kurdi, B. N. .

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, :205-206

[10] Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells [J].

Hsiung, Chang-Po ;

Liao, Hsin-Wei ;

Gan, Jon-Yiew ;

Wu, Tai-Bo ;

Hwang, Jenn-Chang ;

Chen, Frederick ;

Tsai, Ming-Jinn .

ACS NANO, 2010, 4 (09) :5414-5420

← 1 2 3 4 5 6 →