A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function

被引：33

作者：

Chen, Rongsheng ^{[1
]}

Zheng, Xueren ^{[1
]}

Deng, Wanfing ^{[1
]}

Wu, Zhaohui ^{[1
]}

机构：

[1] S China Univ Technol, Inst Microelect, Guangzhou 510640, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 06期

关键词：

Lambert W function; surface potential; analytical solution; compact model; poly-Si TFTs;

D O I：

10.1016/j.sse.2007.03.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics-based analytical solution to the surface potential of polysilicon thin film transistors (poly-Si TFTs) using the Lambert W function has been derived from poly-Si TFTs implicit surface potential equation without any empirical smoothing functions. The analytical solution eliminates the need for the complex iterative computation and is very accurate with absolute error only in nanovolt range. Its high accuracy is proved by a comparison of calculating the surface potential under various bias conditions with respective numerical results and also by the fact that the characteristics of the surface potential derivative with respect to the gate voltage show no splits and peaks. A poly-Si TFTs charge sheet model based on this precise analytical surface potential solution is developed and the results are verified using the experimental data. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：975 / 981

页数：7

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