Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

被引：65
作者：
Chang, S. J. [1 ]
Shen, C. F.
Chen, W. S.
Kuo, C. T.
Ko, T. K.
Shei, S. C.
Sheu, J. K.
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[4] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[5] Epistar Corp, Hsinshi 744, Taiwan
[6] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期
关键词：
D O I：
10.1063/1.2753726
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20 mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24 V while the LED output powers were 11.7, 12.6, and 13.3 mW for the conventional ITO LED, ITO LED patterned with 1.75 mu m holes, and ITO LED patterned with 0.85 mu m holes, respectively. (C) 2007 American Institute of Physics.
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页数：3
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