Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

被引：36
作者：
Lee, Jiyoul [1 ,2 ]
van Breemen, Albert J. J. M. [1 ]
Khikhlovskyi, Vsevolod [1 ,3 ]
Kemerink, Martijn [3 ,4 ]
Janssen, Rene A. J. [3 ]
Gelinck, Gerwin H. [1 ,3 ]
机构：
[1] Holst Ctr TNO, High Tech Campus 31, NL-5656 AE Eindhoven, Netherlands
[2] Pukyong Natl Univ, Dept Graph Arts Informat Engn, Busan 608739, South Korea
[3] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands
[4] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
来源：
SCIENTIFIC REPORTS | 2016年 / 6卷
关键词：
FIELD-EFFECT TRANSISTOR; BEHAVIOR; DEVICES; BLENDS; GATE;
D O I：
10.1038/srep24407
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.
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页数：7
相关论文
共 37 条
[1]   Organic non-volatile memories from ferroelectric phase-separated blends [J].
Asadi, Kamal ;
De Leeuw, Dago M. ;
De Boer, Bert ;
Blom, Paul W. M. .
NATURE MATERIALS, 2008, 7 (07) :547-550
[2]   Spinodal Decomposition of Blends of Semiconducting and Ferroelectric Polymers [J].
Asadi, Kamal ;
Wondergem, Harry J. ;
Moghaddam, Reza Saberi ;
McNeill, Christopher R. ;
Stingelin, Natalie ;
Noheda, Beatriz ;
Blom, Paul W. M. ;
de Leeuw, Dago M. .
ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (10) :1887-1894
[3]   Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage [J].
Asadi, Kamal ;
Li, Mengyuan ;
Stingelin, Natalie ;
Blom, Paul W. M. ;
de Leeuw, Dago M. .
APPLIED PHYSICS LETTERS, 2010, 97 (19)
[4]   Tunable Injection Barrier in Organic Resistive Switches Based on Phase-Separated Ferroelectric-Semiconductor Blends [J].
Asadi, Kamal ;
de Boer, Tom G. ;
Blom, Paul W. M. ;
de Leeuw, Dago M. .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (19) :3173-3178
[5]   High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory [J].
Baeg, Kang-Jun ;
Khim, Dongyoon ;
Kim, Juhwan ;
Yang, Byung-Do ;
Kang, Minji ;
Jung, Soon-Won ;
You, In-Kyu ;
Kim, Dong-Yu ;
Noh, Yong-Young .
ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (14) :2915-2926
[6]   General observation of n-type field-effect behaviour in organic semiconductors [J].
Chua, LL ;
Zaumseil, J ;
Chang, JF ;
Ou, ECW ;
Ho, PKH ;
Sirringhaus, H ;
Friend, RH .
NATURE, 2005, 434 (7030) :194-199
[7]   Intrinsic ferroelectric coercive field [J].
Ducharme, S ;
Fridkin, VM ;
Bune, AV ;
Palto, SP ;
Blinov, LM ;
Petukhova, NN ;
Yudin, SG .
PHYSICAL REVIEW LETTERS, 2000, 84 (01) :175-178
[8]   Factors governing ferroelectric switching characteristics of thin VDF/TrFE copolymer films [J].
Furukawa, Takeo ;
Nakajima, Takashi ;
Takahashi, Yoshiyuki .
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2006, 13 (05) :1120-1131
[9]   Universal Polarization Switching Behavior of Disordered Ferroelectrics [J].
Genenko, Yuri A. ;
Zhukov, Sergey ;
Yampolskii, Sergey V. ;
Schuetrumpf, Joerg ;
Dittmer, Robert ;
Jo, Wook ;
Kungl, Hans ;
Hoffmann, Michael J. ;
von Seggern, Heinz .
ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (10) :2058-2066
[10]  
Greiner MT, 2012, NAT MATER, V11, P76, DOI [10.1038/NMAT3159, 10.1038/nmat3159]
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