High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes

被引：229
作者：
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Sugimoto, Y
Kiyoku, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8B期
关键词：
laser diode; InGaN; blue; long lifetime; MQW;
D O I：
10.1143/JJAP.36.L1059
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The continuous-wave operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature with a high output power of 50 mW, a high operating temperature of 100 degrees C and a long Lifetime of 300 hours. The characteristic temperature of the threshold current was as high as 170 K. The emission wavelength of the LDs was 416 nm.
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收藏
页码：L1059 / L1061
页数：3
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