High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes

被引：229

作者：

Nakamura, S

Senoh, M

Nagahama, S

Iwasa, N

Yamada, T

Matsushita, T

Sugimoto, Y

Kiyoku, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8B期

关键词：

laser diode; InGaN; blue; long lifetime; MQW;

D O I：

10.1143/JJAP.36.L1059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The continuous-wave operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature with a high output power of 50 mW, a high operating temperature of 100 degrees C and a long Lifetime of 300 hours. The characteristic temperature of the threshold current was as high as 170 K. The emission wavelength of the LDs was 416 nm.

引用

页码：L1059 / L1061

页数：3

共 6 条

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