Extraction of Polarization-Dependent Damping Constant for Dynamic Evaluation of Ferroelectric Films and Devices

被引：14

作者：

Li, Yang ^{[1
]}

Han, Kaizhen ^{[1
]}

Kang, Yuye ^{[1
]}

Kong, Eugene Yu Jin ^{[1
]}

Gong, Xiao ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 08期

关键词：

Negative capacitance; field-effect transistor; ferroelectric; damping constant; Landau model; Miller model; NEGATIVE-CAPACITANCE;

D O I：

10.1109/LED.2018.2845946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Damping constant xi(FE) is the key parameter that determines the maximum operating speed of the negative capacitance ferroelectric field-effect transistor (NC-FET). While most studies assume a constant xi(FE) of a specific ferroelectric material, in this letter, we propose a method to extract xi(FE) value which is dependent on its polarization. This method applies to both Mille rmodel (positive capacitance) and Landau model (negative capacitance). It enables further analysis on dynamic characteristics of a ferroelectric film and therefore NC-FET. We apply this method to Pb(Zr0.4Ti0.6)O-3(PZT) and P(VDF-TrFE) and find that xi(FE) reduces during polarization switching as compared with pre-switching. In addition, PZT exhibits a weaker damping effect than P(VDF-TrFE). Finally, the xi(FE) values of various ferroelectrics are compared. A wide range of xi(FE) values is observed, even for the same material. This indicates that xi(FE) is likely to vary with ferroelectric materials and their dimensions.

引用

页码：1211 / 1214

页数：4

共 24 条

[21] Steep-slope hysteresis-free negative capacitance MoS2 transistors [J].

Si, Mengwei ;

Su, Chun-Jung ;

Jiang, Chunsheng ;

Conrad, Nathan J. ;

Zhou, Hong ;

Maize, Kerry D. ;

Qiu, Gang ;

Wu, Chien-Ting ;

Shakouri, Ali ;

Alam, Muhammad A. ;

Ye, Peide D. .

NATURE NANOTECHNOLOGY, 2018, 13 (01) :24-+

[22] Polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films -: art. no. 092905 [J].

So, YW ;

Kim, DJ ;

Noh, TW ;

Yoon, JG ;

Song, TK .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[23]

Song TK, 2005, J KOREAN PHYS SOC, V46, P5

[24] A Fast Vth Measurement (FVM) Technique for NBTI Behavior Characterization [J].

Yu, Xiao ;

Cheng, Ran ;

Liu, Wei ;

Qu, Yiming ;

Han, Jinghui ;

Chen, Bing ;

Lu, Jiwu ;

Zhao, Yi .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) :172-175

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