Development of two-dimensional materials for electronic applications

被引：9
作者：
Li, Xuefei
Gao, Tingting
Wu, Yanqing [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China
来源：
SCIENCE CHINA-INFORMATION SCIENCES | 2016年 / 59卷 / 06期
基金：
中国国家自然科学基金;
关键词：
two-dimensional materials; transistors; dielectrics; molybdenum disulfide; black phosphorus; FIELD-EFFECT TRANSISTORS; LAYER BLACK PHOSPHORUS; TRANSPORT ANISOTROPY; HIGH-FREQUENCY; 1/F NOISE; MOS2; MONOLAYER; SINGLE; TRANSITION; CIRCUITS;
D O I：
10.1007/s11432-016-5559-z
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Since the first report of promising electrical properties of Molybdenum disulfide (MoS2) transistors in 2011, two-dimensional materials with unique properties have attracted great attention, and much research on their applications has been carried out. MoS2 and black phosphorus are excellent candidates for advanced applications in future electronics because of their tunable bandgap, high carrier mobility, and ultra-thin bodies. In this review, recent research trends in the application of molybdenum disulfide and black phosphorus to electronic devices are examined. We mainly address mobility improvements, dielectrics engineering, radio frequency applications, and low-frequency noise, all of which are crucial for the development of electronic and optoelectronic devices.
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页数：14
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