Future electron devices and SOI technology - Semi-planar SOI MOSFETs with sufficient body effect

We propose semi-planar silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs) in which the short channel effect is suppressed while a sufficient value of the body effect factor is maintained. The sufficient body effect is essential in suppressing the device characteristic fluctuations in the deep sub-100nm regime by adaptive substrate bias control. It is shown that the optimum device design is changed when we take the body effect factor into consideration. As examples of semi-planar SOI MOSFETs, a triangular channel structure and a FinFET structure with low aspect ratio are investigated by simulation and experiment. The short channel effect is suppressed due to a three-dimensionally patterned gate structure and the body effect factor is maintained due to the relatively low aspect ratio of the channel. Simulation and experiment clearly demonstrate the superiority of semi-planar SOI MOSFETs.