Band gap engineering in SnO2 by Pb doping

被引:41
作者
Sarangi, S. N. [1 ]
Pradhan, Gopal K. [1 ]
Samal, D. [1 ,2 ]
机构
[1] Inst Phys, Sachivalaya Marg, Bhubaneswar 751005, Odisha, India
[2] Homi Bhabha Natl Inst, Bombay 400085, Maharashtra, India
关键词
Transparent conductive oxides; Band gap engineering; Pb doped SnO2; Dirac material; THIN-FILMS;
D O I
10.1016/j.jallcom.2018.05.143
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
There is a growing need to lower the band gap of the transparent conductive tin oxide (SnO2) in view of its potential application in photo-electronic technology. Here, we systematically investigated the effect of Pb doping on lowering the band gap of SnO2. We demonstrate a significant reduction in its band gap to as much as similar to 0.8 eV (3.64 eV-2.87 eV) upon 15% Pb doping. The observed band gap tunability with Pb-incorporation provides a direct and efficient approach to effectively tailor the band gap and is expected to open up applications in emerging oxide opto-electronic and energy applications. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:16 / 20
页数:5
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