Influence of Passivating SiO x Films on Porous Silicon Photoluminescence

被引：1

作者：

Olenych, I. B. ^{[1
]}

Monastyrskii, L. S. ^{[1
]}

Koman, B. P. ^{[1
]}

Luchechko, A. P. ^{[1
]}

机构：

[1] Ivan Franko Natl Univ Lviv, 50 Dragomanov Str, UA-79005 Lvov, Ukraine

来源：

JOURNAL OF APPLIED SPECTROSCOPY | 2016年 / 83卷 / 01期

关键词：

porous silicon; passivation; photoluminescence; light transmission; LUMINESCENCE; STABILIZATION; SURFACE; LAYERS;

D O I：

10.1007/s10812-016-0251-z

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The possibility of passivating the surface of photoluminescent porous silicon by thin SiO (x) films is studied. The influence of the passivating fi lm on the porous silicon photoluminescence spectra is investigated using luminescence, optical, and IR spectroscopy. It is shown that most of the IR absorption bands of porous silicon structures correspond to molecular complexes containing hydrogen and oxygen. It is demonstrated that the SiO (x) films are transparent for the exciting light and for the light generated by the porous silicon and can be used to minimize degradation processes and to protect the porous layer from the environment.

引用

页码：111 / 114

页数：4

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