Investigation of an amorphous silicon EPID for measurement and quality assurance of enhanced dynamic wedge

This work assessed the dosimetric performance of an amorphous silicon electronic portal imaging device (EPID) for measurement and quality assurance of enhanced dynamic wedge (EDW) profile and wedge factor. EPID measurements of EDW profiles were corrected for pixel sensitivity variation and spectral over-response relative to ion chamber and compared to ion-chamber and diode-array measurements. The dependence of EPID measurements on wedge direction and source to EPID distance was assessed. The long-term stability was investigated by weekly measurement of EDW profiles and wedge factors over a seven month interval. An empirical correction method was developed to improve EPID profile agreement with diode-array measurements. The EPID profiles differed from conventional measurements by up to 5%. Backscatter from the EPID housing was also found to affect measurements by up to 4%, resulting in changes in EPID measured profile with the direction of the moving jaw and source to EPID distance. EPID profile measurements varied by a maximum of 0.3% (1 SD) within the umbra, and wedge factors varied by 0.3% (1 SD) over the seven month interval. The correction function improved agreement between EPID and diode array to within 2% for all wedge angles and energies. Due to the ease of use and reproducibility of the EPID-measured EDW profiles the device is highly suited to regular measurement of EDW.