Simple Synthesis and Growth Mechanism of Core/Shell CdSe/SiOx Nanowires

被引：7

作者：

Dai, Guozhang ^{[1
,2
]}

Yang, Shengyi ^{[1
]}

Yan, Min ^{[2
]}

Wan, Qiang ^{[2
]}

Zhang, Qinglin ^{[2
]}

Pan, Anlian ^{[2
]}

Zou, Bingsuo ^{[1
,2
]}

机构：

[1] Beijing Inst Technol, Sch Mat Sci & Engn Beijing, Lab Nanophoton Mat & Technol, Beijing 100081, Peoples R China

[2] Hunan Univ, Minist Educ, Key Lab Micronano Optoeletron Devices, Changsha 410082, Hunan, Peoples R China

来源：

JOURNAL OF NANOMATERIALS | 2010年 / 2010卷

关键词：

CORE-SHELL NANOWIRES; NANOSTRUCTURES; MANIPULATION; NANOCRYSTALS; FABRICATION; MORPHOLOGY;

D O I：

10.1155/2010/427689

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Core-shell-structured CdSe/SiOx nanowires were synthesized on an equilateral triangle Si (111) substrate through a simple one-step thermal evaporation process. SEM, TEM, and XRD investigations confirmed the core-shell structure; that is, the core zone is single crystalline CdSe and the shell zone is SiOx amorphous layer and CdSe core was grown along (001) direction. Two-stage growth process was present to explain the growth mechanism of the core/shell nanwires. The silicon substrate of designed equilateral triangle providing the silicon source is the key factor to form the core-shell nanowires, which is significant for fabrication of nanowire-core sheathed with a silica system. The PL of the product studied at room temperature showed two emission bands around 715 and 560 nm, which originate from the band-band transition of CdSe cores and the amorphous SiOx shells, respectively.

引用

页数：6