Correlating yellow and blue luminescence with carbon doping in GaN

被引：5

作者：

Schmult, S. ^{[1
]}

Schuermann, H. ^{[2
]}

Schmidt, G. ^{[2
]}

Veit, P. ^{[2
]}

Bertram, F. ^{[2
]}

Christen, J. ^{[2
]}

Grosser, A. ^{[3
]}

Mikolajick, T. ^{[1
,3
]}

机构：

[1] Tech Univ Dresden, Inst Semicond & Microsyst, Elect & Comp Engn, Nothnitzer Str 64, D-01187 Dresden, Germany

[2] Otto von Guericke Univ, Inst Phys, Univ Pl 2, D-39106 Magdeburg, Germany

[3] Namlab gGmbH, Nothnitzer Str 64 A, D-01187 Dresden, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2022年 / 586卷

关键词：

A3; Molecular beam epitaxy; B1; Nitrides; A1; Carbon-doping; High resolution scanning transmission; electron microscopy cathodoluminescence; Impurities; Interfaces;

D O I：

10.1016/j.jcrysgro.2022.126634

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Blue and yellow emission bands in carbon-doped GaN grown by MBE were investigated in low-temperature cathodoluminescence measurements performed in a scanning transmission electron microscope (STEM-CL) with high spatial resolution. Blue luminescence at 2.85 eV and two contributions in the spectral range of the yellow emission band around 2.2 eV separated by 120 meV are observed in carbon-doped material, whereas only one distinctive yellow luminescence contribution was found in unintentionally-doped GaN.

引用

页数：4

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