GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%

被引：17

作者：

Yukimune, M. ^{[1
]}

Fujiwara, R. ^{[1
]}

Ikeda, H. ^{[1
]}

Yano, K. ^{[1
]}

Takada, K. ^{[1
]}

Jansson, M. ^{[2
]}

Chen, W. M. ^{[2
]}

Buyanova, I. A. ^{[2
]}

Ishikawa, F. ^{[1
]}

机构：

[1] Ehime Univ, Grad Sch Sci & Engn, 3 Bunkyo Cho, Matsuyama, Ehime 7908577, Japan

[2] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 01期

关键词：

SHELL NANOWIRES; GAAS NANOWIRES; GROWTH;

D O I：

10.1063/1.5029388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of GaAs/GaNAs/GaAs core-multishell nanowires having N compositions exceeding 2%. The structures were grown by plasma-assisted molecular beam epitaxy using constituent Ga-induced vapor-liquid-solid growth on Si(111) substrates. The GaNAs shell nominally contains 0%, 2%, and 3% nitrogen. The axial cross-sectional scanning transmission electron microscopy measurements confirm the existence of core-multishell structure. The room temperature micro-photoluminescence measurements reveal a red-shift of the detected emission with increasing N content in the nanowires, consistent with the expected changes in the GaNAs bandgap energy due to the bowing effect. Published by AIP Publishing.

引用

页数：5

共 20 条

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[2] Magnetophotoluminescence in GaAs/AlAs core-multishell nanowires: A theoretical investigation
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[6] Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires
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[7] Polytypism in GaAs/GaNAs core-shell nanowires
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[8] GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range
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