Electrical characterization of atomic layer deposited Al2O3/InN interfaces

被引：2
作者：
Jia, Ye [1 ]
Dabiran, Amir M. [2 ]
Singisetti, Uttam [1 ]
机构：
[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[2] SVT Associates Inc, Eden Prairie, MN 55344 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2016年 / 34卷 / 01期
关键词：
VALENCE-BAND OFFSETS; PHOTOELECTRON-SPECTROSCOPY; INN NANOWIRES; OXIDE; TRANSPORT; SURFACES; SILICON; INDIUM; GAN;
D O I：
10.1116/1.4936928
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this article, the authors report the electrical properties of atomic layer deposited Al2O3/InN interfaces evaluated by capacitance-voltage (C-V), current-voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA/mu m(2)) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4 x 10(13)/cm(2). The effect of the surface treatments on valance band offset between Al2O3 and InN was also investigated. (C) 2015 American Vacuum Society.
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页数：6
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