Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

被引：8
作者：
Wang QingXiang [1 ]
Fan ZhiKang [1 ]
Liang ShuHua [1 ]
机构：
[1] Xian Univ Technol, Sch Mat Sci & Engn, Xian 710048, Peoples R China
来源：
SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2010年 / 53卷 / 04期
基金：
中国国家自然科学基金;
关键词：
nanocrystalline W-Ti thin films; diffusion barrier; anneal; sheet resistance; LAYERS; SI;
D O I：
10.1007/s11431-009-0402-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline W-Ti diffusion barrier thin films with different phase structures and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. These films were annealed at different temperatures for 1 h. The diffusion barrier properties and thermal stability were studied using four-probe tester (FPP), XRD, AFM, XPS, FESEM, and HRTEM. The experimental results showed that the films were stable up to 700A degrees C. When the annealing temperature was increased, the Cu and Ti atoms began to react and CuTi3 was formed. In addition, the high resistance Cu3Si was formed due to inter-diffusion between the Si and Cu atoms which made the surface rougher and caused the sheet resistance to increase abruptly. At the same time, failure mechanism of the nanocrystalline W-Ti diffusion barrier thin films during annealing process was also discussed.
引用
收藏
页码：1049 / 1055
页数：7
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