AlGaN-GaN heterostructure FETs with offset gate design

被引：39
作者：
Gaska, R
Chen, Q
Yang, J
Khan, MA
Shur, MS
Ping, A
Adesida, I
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
[2] UNIV ILLINOIS,MICROELECT LAB,URBANA,IL 61801
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 14期
关键词：
field effect transistors;
D O I：
10.1049/el:19970818
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.
引用
收藏
页码：1255 / 1257
页数：3
相关论文
共 8 条
[1]  
ASIF KM, 1996, IEEE ELECT DEVICE LE, V17, P325
[2]   Microwave performance of 0.25 mu m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures [J].
Chen, Q ;
Gaska, R ;
Khan, MA ;
Shur, MS ;
Ping, A ;
Adesida, I ;
Burm, J ;
Schaff, WJ ;
Eastman, LF .
ELECTRONICS LETTERS, 1997, 33 (07) :637-639
[3]   Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency [J].
Khan, MA ;
Chen, Q ;
Shur, MS ;
Dermott, BT ;
Higgins, JA ;
Burm, J ;
Schaff, W ;
Eastman, LF .
ELECTRONICS LETTERS, 1996, 32 (04) :357-358
[4]   Reactive molecular-beam epitaxy for Wurtzite GaN [J].
Mohammad, SN ;
Kim, W ;
Salvador, A ;
Morkoc, H .
MRS BULLETIN, 1997, 22 (02) :22-28
[5]   Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors [J].
Mohammad, SN ;
Fan, ZF ;
Salvador, A ;
Aktas, O ;
Botchkarev, AE ;
Kim, W ;
Morkoc, H .
APPLIED PHYSICS LETTERS, 1996, 69 (10) :1420-1422
[6]  
SHUR MS, 1978, IEDM, P381
[7]  
SUDARSHAN TS, UNPUB
[8]   Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors [J].
Wu, YF ;
Keller, BP ;
Keller, S ;
Kapolnek, D ;
Kozodoy, P ;
Denbaars, SP ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 1996, 69 (10) :1438-1440
1