Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

被引:133
作者
Strassburg, M
Kutzer, V
Pohl, UW
Hoffmann, A
Broser, I
Ledentsov, NN
Bimberg, D
Rosenauer, A
Fischer, U
Gerthsen, D
Krestnikov, IL
Maximov, MV
Kop'ev, PS
Alferov, ZI
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
关键词
D O I
10.1063/1.120880
中图分类号
O59 [应用物理学];
学科分类号
摘要
By inserting stacked sheets of nominally 0.7 monolayer CdSe into a ZnSe matrix we create a region with strong resonant excitonic absorption. This leads to an enhancement of the refractive index on the low-energy side of the absorption peak, Efficient waveguiding can thus be achieved without increasing the average refractive index of the active layer with respect to the cladding. Processed high-resolution transmission electron microscopy images show that the CdSe insertions form Cd-rich two-dimensional (Cd, Zn)Se islands with lateral sizes of about 5 nm. The islands act as quantum dots with a three-dimensional confinement for excitons. Zero-phonon gain is observed in the spectral range of excitonic and biexcitonic waveguiding. At high excitation densities excitonic gain is suppressed due to the population of the quantum dots with biexcitons. (C) 1998 American Institute of Physics.
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页码:942 / 944
页数:3
相关论文
共 13 条
[1]   EXCITON-INDUCED ENHANCEMENT OF OPTICAL WAVE-GUIDE CONFINEMENT IN (ZN,CD)(SE,S) QUANTUM-WELL LASER HETEROSTRUCTURES [J].
ALFEROV, ZI ;
IVANOV, SV ;
KOPEV, PS ;
LEBEDEV, AV ;
LEDENTSOV, NN ;
MAXIMOV, MV ;
SEDOVA, IV ;
SHUBINA, TV ;
TOROPOV, AA .
SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (02) :65-68
[2]  
ALFEROV ZI, 1963, Patent No. 27448ZI
[3]   ENERGY-LEVELS AND EXCITON OSCILLATOR STRENGTH IN SUBMONOLAYER INAS-GAAS HETEROSTRUCTURES [J].
BELOUSOV, MV ;
LEDENTSOV, NN ;
MAXIMOV, MV ;
WANG, PD ;
YASIEVICH, IN ;
FALEEV, NN ;
KOZIN, IA ;
USTINOV, VM ;
KOPEV, PS ;
TORRES, CMS .
PHYSICAL REVIEW B, 1995, 51 (20) :14346-14351
[4]   High-density effects, stimulated emission, and electrooptical properties of ZnCdSe/ZnSe single quantum wells and laser diodes [J].
Grempel, H ;
Diessel, A ;
Ebeling, W ;
Gutowski, J ;
Schull, K ;
Jobst, B ;
Hommel, D ;
Pereira, MF ;
Henneberger, K .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 194 (01) :199-217
[5]   FREE EXCITON MOTION IN CRYSTALS AND EXCITON-PHONON INTERACTION [J].
GROSS, E ;
PERMOGOR.S ;
RAZBIRIN, B .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1647-&
[6]   Gain and threshold of quantum dot lasers: Theory and comparison to experiments [J].
Grundmann, M ;
Bimberg, D .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B) :4181-4187
[7]   Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys [J].
Ivanov, SV ;
Sorokin, SV ;
Kopev, PS ;
Kim, JR ;
Jung, HD ;
Park, HS .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :16-20
[8]  
KRELLER F, 1996, P 23 INT C PHYS SEM, V3, P2111
[9]  
KRESTNIKOV IL, 1996, P 23 INT C PHYS SEM, V4, P3187
[10]  
KRESTNIKOV IL, 1997, 2 INT C LOW DIM STRU