Observations on the chemistry and physics of STI etch in Cl2-Ar plasmas

被引：0

作者：

Werbaneth, P ^{[1
]}

Almerico, J ^{[1
]}

机构：

[1] Tegal Corp, Petaluma, CA 94955 USA

来源：

SOLID STATE TECHNOLOGY | 2000年 / 43卷 / 12期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The detailed mechanisms of a plasma etch process explain Its ability to improve the taper profile for shallow trench isolation. A two-gas etch chemistry is used, and the controlled redeposition of etch products along the sidewall of the etched feature is a key part of the process.

引用

页码：87 / +

页数：4

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