Observations on the chemistry and physics of STI etch in Cl2-Ar plasmas

被引：0
|
作者：
Werbaneth, P [1 ]
Almerico, J [1 ]
机构：
[1] Tegal Corp, Petaluma, CA 94955 USA
来源：
SOLID STATE TECHNOLOGY | 2000年 / 43卷 / 12期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The detailed mechanisms of a plasma etch process explain Its ability to improve the taper profile for shallow trench isolation. A two-gas etch chemistry is used, and the controlled redeposition of etch products along the sidewall of the etched feature is a key part of the process.
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页码：87 / +
页数：4
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