Feature-rich electronic properties of aluminum-adsorbed graphenes

被引:14
作者
Lin, Shih-Yang [1 ,2 ,3 ]
Lin, Yu-Tsung [1 ]
Ngoc Thanh Thuy Tran [1 ]
Su, Wu-Pei [2 ,3 ]
Lin, Ming-Fa [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
[2] Univ Houston, Dept Phys, Houston, TX 77204 USA
[3] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
关键词
EPITAXIAL GRAPHENE; SINGLE-LAYER; MICROSCOPY; BISMUTH; GAS;
D O I
10.1016/j.carbon.2017.04.077
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic properties of aluminum-adsorbed graphenes enriched by multi-orbital hybridizations are investigated by using first-principles calculations. The enriched features include the quasi-rigid red shifts of the carbon-related energy bands, the Al-dominated valence and conduction bands, and enhanced density of states (DOS) near the Dirac cone. The Al- and alkali-induced high free carrier densities are almost the same. There exist certain important differences among the Al-, alkali- and halogen-adsorbed graphenes, such as, the buckled or planar graphene, the preserved or seriously distorted Dirac cone, the presence or absence of the adatom-dominated valence bands, the free electrons or holes, the degenerate or split spin-related states, and the split peaks in DOS. The similarities and differences come mainly from the diverse orbital hybridizations in adatom-C bonds, reflected in the atom-dominated bands, the spatial charge distributions and the orbital-projected DOS. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:209 / 218
页数:10
相关论文
共 66 条
  • [1] Graphene on ordered Ni-alloy surfaces formed by metal (Sn, Al) intercalation between graphene/Ni(111)
    Addou, Rafik
    Dahal, Arjun
    Batzill, Matthias
    [J]. SURFACE SCIENCE, 2012, 606 (13-14) : 1108 - 1112
  • [2] Enhancement of CO detection in Al doped graphene
    Ao, Z. M.
    Yang, J.
    Li, S.
    Jiang, Q.
    [J]. CHEMICAL PHYSICS LETTERS, 2008, 461 (4-6) : 276 - 279
  • [3] High-capacity hydrogen storage in Al-adsorbed graphene
    Ao, Z. M.
    Peeters, F. M.
    [J]. PHYSICAL REVIEW B, 2010, 81 (20):
  • [4] Al doped graphene: A promising material for hydrogen storage at room temperature
    Ao, Z. M.
    Jiang, Q.
    Zhang, R. Q.
    Tan, T. T.
    Li, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [5] Superior thermal conductivity of single-layer graphene
    Balandin, Alexander A.
    Ghosh, Suchismita
    Bao, Wenzhong
    Calizo, Irene
    Teweldebrhan, Desalegne
    Miao, Feng
    Lau, Chun Ning
    [J]. NANO LETTERS, 2008, 8 (03) : 902 - 907
  • [6] Electronic confinement and coherence in patterned epitaxial graphene
    Berger, Claire
    Song, Zhimin
    Li, Xuebin
    Wu, Xiaosong
    Brown, Nate
    Naud, Cecile
    Mayou, Didier
    Li, Tianbo
    Hass, Joanna
    Marchenkov, Atexei N.
    Conrad, Edward H.
    First, Phillip N.
    de Heer, Wait A.
    [J]. SCIENCE, 2006, 312 (5777) : 1191 - 1196
  • [7] PROJECTOR AUGMENTED-WAVE METHOD
    BLOCHL, PE
    [J]. PHYSICAL REVIEW B, 1994, 50 (24): : 17953 - 17979
  • [8] First-principles study of metal adatom adsorption on graphene
    Chan, Kevin T.
    Neaton, J. B.
    Cohen, Marvin L.
    [J]. PHYSICAL REVIEW B, 2008, 77 (23):
  • [9] Long-range interactions of bismuth growth on monolayer epitaxial graphene at room temperature
    Chen, H. -H.
    Su, S. H.
    Chang, S. -L.
    Cheng, B. -Y.
    Chong, C. -W.
    Huang, J. C. A.
    Lin, M. -F.
    [J]. CARBON, 2015, 93 : 180 - 186
  • [10] Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene
    Chen, H. -H.
    Su, S. H.
    Chang, S. -L.
    Cheng, B. -Y.
    Chen, S. W.
    Chen, H. -Y.
    Lin, M. -F.
    Huang, J. C. A.
    [J]. SCIENTIFIC REPORTS, 2015, 5