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- [21] Diseleno[3,2-b:2′,3′-d]selenophene-Containing High-Mobility Conjugated Polymer for Organic Field-Effect Transistors (vol 6, 1900245, 2019)ADVANCED SCIENCE, 2019, 6 (17)Jang, Soo-YoungKim, In-BokKang, MinjiFei, ZhupingJung, EunhwanMcCarthy-Ward, ThomasShaw, JessicaLim, Dae-HeeKim, Yeon-JuMathur, SanjayHeeney, MartinKim, Dong-Yu
- [23] Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3/SiO2 gate stacks -: art. no. 113706JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)Saito, STorii, KShimamoto, YTonomura, OHisamoto, DOnai, THiratani, MKimura, SManabe, YCaymax, MMaes, JW
- [24] Infrared investigation of the low-temperature structural and magnetic transitions in the spin-ladder candidate (DT-TTF)2Au(mnt)2 (vol B 68, art no 134405, 2003) -: art. no. 059901PHYSICAL REVIEW B, 2004, 70 (05)Wesolowski, RHaraldsen, JTMusfeldt, JLBarnes, TMas-Torrent, MRovira, CHenriques, RTAlmeida, M
- [25] RETRACTION: Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Retraction of Vol 112, art no 242103, 2018)APPLIED PHYSICS LETTERS, 2018, 113 (02)Xu, ChangGao, HongmiaoSugino, TakayukiMiyao, MasanobuSadoh, Taizoh
- [26] Facile fabrication method for p/n-type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene -: art. no. 052104APPLIED PHYSICS LETTERS, 2005, 86 (05) : 1 - 3Hayashi, YKanamori, HYamada, ITakasu, ATakagi, SKaneko, K
- [27] Low-temperature thermal transport in high-temperature superconducting Bi2Sr2CaCu2O8 via a Y-doped insulating analogue -: art. no. 140506PHYSICAL REVIEW B, 2002, 65 (14): : 1 - 4Movshovich, RMoshopoulou, EGLin, PSalamon, MBJaime, MHundley, MFSarrao, JL
- [28] Excitonic Zeeman effect in the zinc-blende II-VI diluted magnetic semiconductors Cd(1-x)YxTe (Y=Mn, Co or Fe) (vol B 63, pg 155201, 2001) -: art. no. 089901PHYSICAL REVIEW B, 2001, 64 (08):Alawadhi, HMiotkowski, ISouw, VMcElfresh, MRamdas, AKMiotkowska, S
- [29] Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics -: art. no. 114504JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)Zhu, SYNakajima, AOhashi, TMiyake, H
- [30] High drain current density and reduced gate leakage current in channel-doped AlGaN/GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator -: art. no. 073504APPLIED PHYSICS LETTERS, 2005, 87 (07)Maeda, NWang, CXEnoki, TMakimoto, TTawara, T