Study of buried interfaces in Fe/Si multilayer by hard x-ray emission spectroscopy

被引:0
作者
Verma, Hina [1 ]
Le Guen, Karine [1 ]
Delaunay, Renaud [1 ]
Ismail, Iyas [1 ]
Ilakovac, Vita [1 ,2 ]
Rueff, Jean Pascal [1 ,3 ]
Zheng, Yunlin Jacques [4 ]
Jonnard, Philippe [1 ]
机构
[1] Sorbonne Univ, Fac Sci & Ingn, CNRS, UMR,Lab Chim Phys Mat & Rayonnement, 4 Pl Jussieu, F-75252 Paris 05, France
[2] CY Cergy Univ, Dept Phys, Cergy Pontoise, France
[3] Synchrotron SOLEIL, Gif Sur Yvette, France
[4] Sorbonne Univ, CNRS, UMR 7588, Inst NanoSci Paris INSP, Paris, France
关键词
buried interfaces; multilayer; x-ray emission spectroscopy; TEMPERATURE; RESOLUTION; SILICON; GROWTH; FILMS;
D O I
10.1002/sia.7005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hard x-ray emission spectroscopy (XES) has been used to study buried layers and interfaces in a Fe/Si periodic multilayer. Until now, buried layers could be studied using the XES in the soft x-ray range. Here, we extend the methodology to study the buried interfaces in hard x-ray region (photon energy >= 5 keV). We report the formation of FeSi2 at all the interfaces with thicknesses of 1.4 nm. X-ray reflectivity measurements enable us to deduce the structure and thickness of the multilayer stack, thereby confirming the presence of FeSi2.
引用
收藏
页码:1043 / 1047
页数:5
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