Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties

被引：0

作者：

Li, Jianfei ^{[1
,2
]}

Lv, Yuanjie ^{[2
]}

Huang, Shulai ^{[3
]}

Ji, Ziwu ^{[1
]}

Pang, Zhiyong ^{[1
]}

Xu, Xiangang ^{[4
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China

[2] Hebei Semicond Res Inst, Sci & Technol Applicat Specif Integrated Circuit, Shijiazhuang 050051, Peoples R China

[3] Qingdao Agr Univ, Sci & Informat Coll, Qingdao 266109, Peoples R China

[4] Shandong Univ, Minist Educ, Key Lab Funct Crystal Mat & Device, Jinan 250100, Peoples R China

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2017年 / 11卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

Strain relaxation; Hall effect; Photoluminescence; Crack; 2-DIMENSIONAL ELECTRON-GAS; MOLECULAR-BEAM EPITAXY; ALGAN/GAN HETEROSTRUCTURES; STRAIN RELAXATION; SAPPHIRE; STRESS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN/GaN heterostructures, with different AlN barrier thicknesses (3 and 6 nm), are characterized using atomic force microscopy, high-resolution transmission electron microscopy, photoluminescence, and Hall effect measurements. Based on the measured results, we suggest that with increased AlN barrier thickness, the tensile strain in the AlN barrier layer is relaxed by crack channels. In addition, the strain-induced cracking also greatly penetrated into the GaN buffer layer, and resulted in the relaxation of the compressive strain and the increase of the defects in the GaN buffer layer. This caused AlN/GaN heterostructure quality deterioration and introduced additional scattering.

引用

页码：184 / 188

页数：5

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