Temperature stability and low dielectric loss of lithium-doped CdCu3Ti4O12 ceramics for X9R capacitor applications

被引:35
作者
Zhao, Nan [1 ]
Liang, Pengfei [2 ]
Wu, Di [1 ]
Chao, Xiaolian [1 ]
Yang, Zupei [1 ]
机构
[1] Shaanxi Normal Univ, Sch Mat Sci & Engn, Key Lab Macromol Sci Shaanxi Prov, Shaanxi Key Lab Adv Energy Devices, Xian 710062, Shaanxi, Peoples R China
[2] Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
基金
美国国家科学基金会;
关键词
X9R capacitor; Low dielectric loss; CdCu3Ti4O12; ceramics; Impedance spectroscopy; Dielectric response; Raman spectroscopy; COLOSSAL PERMITTIVITY; MICROSTRUCTURAL EVOLUTION; ELECTRICAL-CONDUCTION; CACU3TI4O12; SPECTROSCOPY; PERFORMANCE; BEHAVIORS;
D O I
10.1016/j.ceramint.2019.07.344
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report that lithium doping in a CdCu3Ti4O12 ceramic results in the simultaneous reduction of dielectric loss at low frequency and improvement in the temperature stability while maintaining the high permittivity. Detailed microscopic morphology was studied by scanning electron microscopy (SEM). Phase compositions were studied by X-ray diffraction; dielectric properties, by Rietveld analysis, Raman spectroscopy and an impedance analyser. In addition to its grain refining effect, lithium doping intensifies the Ti-O octahedron distortion, thus enhancing polarization, which is believed to be responsible for the enhanced dielectric response. In particular, Li0.01Cd0.99Cu3Ti4O12 exhibited low dielectric loss at 1 kHz (equal to 0.033) and a relatively high dielectric constant (greater than 14,000) in the 40 Hz-100 kHz range. Moreover, the ceramic exhibited outstanding dielectric constant stability at 1 kHz with Delta epsilon'(T)/epsilon(RT)' < +/- 15% over a very broad temperature range (from 218 K to 598 K), which satisfies the commercial criteria of X9R capacitors.
引用
收藏
页码:22991 / 22997
页数:7
相关论文
共 63 条
[1]   Characterization of grain boundary impedances in fine- and coarse-grained CaCu3Ti4O12 ceramics -: art. no. 094124 [J].
Adams, TB ;
Sinclair, DC ;
West, AR .
PHYSICAL REVIEW B, 2006, 73 (09)
[2]  
Adams TB, 2002, ADV MATER, V14, P1321, DOI 10.1002/1521-4095(20020916)14:18<1321::AID-ADMA1321>3.0.CO
[3]  
2-P
[4]   Significantly improved non-Ohmic and giant dielectric properties of CaCu3-xZnxTi4O12 ceramics by enhancing grain boundary response [J].
Boonlakhorn, Jakkree ;
Kidkhunthod, Pinit ;
Putasaeng, Bundit ;
Thongbai, Prasit .
CERAMICS INTERNATIONAL, 2017, 43 (02) :2705-2711
[5]   Effects of Y doping ions on microstructure, dielectric response, and electrical properties of Ca1-3x/2Y x Cu3Ti4O12 ceramics [J].
Boonlakhorn, Jakkree ;
Kidkhunthod, Pinit ;
Putasaeng, Bundit ;
Yamwong, Teerapon ;
Thongbai, Prasit ;
Maensiri, Santi .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (04) :2329-2337
[6]   Dielectric and nonlinear electrical behaviors observed in Mn-doped CaCu3Ti4O12 ceramic [J].
Cai, Jingnan ;
Lin, Yuan-Hua ;
Cheng, Bo ;
Nan, Ce-Wen ;
He, Jinliang ;
Wu, Yongjun ;
Chen, Xiangming .
APPLIED PHYSICS LETTERS, 2007, 91 (25)
[7]   Effect of Al doping on the electric and dielectric properties of CaCu3Ti4O12 [J].
Choi, Sung-Woo ;
Hong, Seong-Hyeon ;
Kim, Young-Min .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2007, 90 (12) :4009-4011
[8]   Modulus spectroscopy of CaCu3Ti4O12 ceramics: clues to the internal barrier layer capacitance mechanism [J].
Costa, Sara I. R. ;
Li, Ming ;
Frade, Jorge R. ;
Sinclair, Derek C. .
RSC ADVANCES, 2013, 3 (19) :7030-7036
[9]   Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering [J].
de la Rubia, M. A. ;
Leret, P. ;
del Campo, A. ;
Alonso, R. E. ;
Lopez-Garcia, A. R. ;
Fernandez, J. F. ;
de Frutos, J. .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2012, 32 (08) :1691-1699
[10]   GRAIN-GROWTH OF ZNO DURING BI2O3 LIQUID-PHASE SINTERING [J].
DEY, D ;
BRADT, RC .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (09) :2529-2534