Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys

被引：180
作者：
Lindsay, A [1 ]
O'Reilly, EP [1 ]
机构：
[1] Univ Coll, NMRC, Cork, Ireland
来源：
PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 19期
基金：
爱尔兰科学基金会;
关键词：
D O I：
10.1103/PhysRevLett.93.196402
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We show that a quantitative description of the conduction band in Ga(In)NAs is obtained by combining the experimentally motivated band anticrossing model with detailed calculations of nitrogen cluster states. The unexpectedly large electron effective mass values observed in many GaNAs samples are due to hybridization between the conduction band edge E- nitrogen cluster states close to the band edge. Similar effects explain the difficulty in observing the higher-lying E+ level at low N composition. We predict a decrease of effective mass with hydrostatic pressure in many GaNAs samples.
引用
收藏
页码：196402 / 1
页数：4
相关论文
共 27 条
[1]  
[Anonymous], PHYS REV B
[2]   Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells -: art. no. 126802 [J].
Endicott, J ;
Patanè, A ;
Ibáñez, J ;
Eaves, L ;
Bissiri, M ;
Hopkinson, M ;
Airey, R ;
Hill, G .
PHYSICAL REVIEW LETTERS, 2003, 91 (12) :126802-126802
[3]   Intrinsic limits on electron mobility in dilute nitride semiconductors [J].
Fahy, S ;
O'Reilly, EP .
APPLIED PHYSICS LETTERS, 2003, 83 (18) :3731-3733
[4]  
FAHY S, IN PRESS IEE P OPT
[5]   III-N-V semiconductors for solar photovoltaic applications [J].
Geisz, JF ;
Friedman, DJ .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (08) :769-777
[6]   Direct determination of electron effective mass in GaNAs/GaAs quantum wells [J].
Hai, PN ;
Chen, WM ;
Buyanova, IA ;
Xin, HP ;
Tu, CW .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1843-1845
[7]   Band structure of InxGa1-xAs1-yNy alloys and effects of pressure [J].
Jones, ED ;
Modine, NA ;
Allerman, AA ;
Kurtz, SR ;
Wright, AF ;
Tozer, ST ;
Wei, X .
PHYSICAL REVIEW B, 1999, 60 (07) :4430-4433
[8]   Failure of nitrogen cluster states to emerge into the bandgap of GaAsN with application of pressure [J].
Kent, PRC ;
Zunger, A .
APPLIED PHYSICS LETTERS, 2003, 82 (04) :559-561
[9]   Pseudopotential theory of dilute III-V nitrides [J].
Kent, PRC ;
Bellaiche, L ;
Zunger, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (08) :851-859
[10]   Theory of electronic structure evolution in GaAsN and GaPN alloys [J].
Kent, PRC ;
Zunger, A .
PHYSICAL REVIEW B, 2001, 64 (11)
123