Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

被引：7

作者：

Liu, Zhengxin ^{[1
]}

Takato, Hidetaka ^{[1
]}

Togashi, Chiho ^{[1
]}

Sakata, Isao ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

关键词：

diffusion; heat treatment; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; solar cells;

D O I：

10.1063/1.3394005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-on doping of phosphorus has been investigated and applied for the emitter fabrication of crystalline Si solar cells. Heat treatment in oxygen atmosphere at relatively low temperature of 550 degrees C prior to phosphorus diffusion is proved effective for improving solar cell performance, showing a conversion efficiency enhancement of more than 0.2% absolute. Internal quantum efficiency measurements show obvious enhancements at both short and long-wavelength regions. Secondary ion mass spectroscopy and Infrared absorption analysis reveal reduced C impurities after the heat treatment, possibly caused by burning the organic residues in the coated dopant source layer.

引用

页数：3

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