Modelling and characterization of non-uniform substrate doping

被引：17
|
作者：
Lallement, C
Bucher, M
Enz, C
机构：
[1] Swiss Fed. Inst. of Technol. (EPFL), Electronics Laboratory, ELB-Ecublens
来源：
SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 12期
关键词：
D O I：
10.1016/S0038-1101(97)00137-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents a new model for the effect of the transverse non-uniform substrate doping on the threshold voltage of MOS transistors. The new model is validated using 2D device simulations and measurements of a CMOS low-voltage process. A simple associated characterization method is also presented. The parameters related to the non-uniform doping are extracted from the pinch-off vs gate voltage characteristic, measured at constant current from a device biased in moderate inversion. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：1857 / 1861
页数：5
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