A Voltage-Scalable Low-Power All-Digital Temperature Sensor for On-Chip Thermal Monitoring

被引:18
作者
Ku, Chia-Yuan [1 ]
Liu, Tsung-Te [1 ]
机构
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
关键词
CMOS temperature sensor; subthreshold; ultra-low power; ring oscillator; leakage current; voltage scalability; thermal monitoring; DEGREES-C; CMOS; 3-SIGMA; COMPENSATION; INACCURACY;
D O I
10.1109/TCSII.2019.2928575
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents a highly supply voltage-scalable, ultra-low-power, all-digital CMOS temperature sensor for on-chip thermal monitoring. The proposed all-digital temperature sensor employs a ring oscillator and a frequency counter to convert the temperature-dependent frequency changes into digital output, featuring a small area, and a high integration capability. The sensor core uses delay elements operating in the sub-threshold region to achieve low power consumption while maintaining high supply scalability. The 0.18 mu m prototype sensor occupies 0.007 mm(2) while consuming 3.92 nW at room temperature from a 0.9-V power supply. The sensing error is less than +0.67/ - 1.64 degrees C from 0 degrees C to 100 degrees C after 2-point calibration. The proposed sensor can operate across a wide range of supply voltage of 0.6 V to 1.2 V, with a supply sensitivity of 0.0019 degrees C/mV.
引用
收藏
页码:1658 / 1662
页数:5
相关论文
共 15 条
[1]   A VCO Based Highly Digital Temperature Sensor With 0.034 °C/mV Supply Sensitivity [J].
Anand, Tejasvi ;
Makinwa, Kofi A. A. ;
Hanumolu, Pavan Kumar .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (11) :2651-2663
[2]  
Chen Gregory, 2010, 2010 IEEE International Solid-State Circuits Conference (ISSCC), P288, DOI 10.1109/ISSCC.2010.5433921
[3]   A time-to-digital-converter-based CMOS smart temperature sensor [J].
Chen, P ;
Chen, CC ;
Tsai, CC ;
Lu, WF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (08) :1642-1648
[4]  
Chundi P. K., 2017, 2017 IEEE ACM INT S, P1
[5]   Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits [J].
Filanovsky, IM ;
Allam, A .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 2001, 48 (07) :876-884
[6]   A Fully-Integrated 71 nW CMOS Temperature Sensor for Low Power Wireless Sensor Nodes [J].
Jeong, Seokhyeon ;
Foo, Zhiyoong ;
Lee, Yoonmyung ;
Sim, Jae-Yoon ;
Blaauw, David ;
Sylvester, Dennis .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (08) :1682-1693
[7]   A 1.05 V 1.6 mW, 0.45 °C 3σ Resolution ΣΔ Based Temperature Sensor With Parasitic Resistance Compensation in 32 nm Digital CMOS Process [J].
Lakdawala, Hasnain ;
Li, Y. William ;
Raychowdhury, Arijit ;
Taylor, Greg ;
Soumyanath, Krishnamurthy .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (12) :3621-3630
[8]   A 405-nW CMOS Temperature Sensor Based on Linear MOS Operation [J].
Law, Man Kay ;
Bermak, A. .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2009, 56 (12) :891-895
[9]   A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated ±3.5 °C 3σ Relative Inaccuracy From-55 °C to 105 °C [J].
Lu, Li ;
Block, Scott T. ;
Duarte, David E. ;
Li, Changzhi .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2013, 60 (11) :771-775
[10]  
Makinwa K. A. A., Smart Temperature Sensor Survey