Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

被引：186

作者：

Kim, Eun Ji ^{[1
]}

Wang, Lingquan ^{[2
]}

Asbeck, Peter M. ^{[2
]}

Saraswat, Krishna C. ^{[1
,3
]}

McIntyre, Paul C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期

关键词：

aluminium compounds; atomic layer deposition; capacitance; energy gap; gallium arsenide; indium compounds; MIS capacitors; passivation; platinum; tunnelling; FIELD-EFFECT TRANSISTORS; INTERFACE; AL2O3;

D O I：

10.1063/1.3281027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge-trapping defects in Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and their passivation by hydrogen are investigated in samples with abrupt oxide/III-V interfaces. Tunneling of electrons into defect states (border traps) in the atomic layer deposited Al2O3 near the oxide/semiconductor interface is found to control the frequency dispersion of the capacitance in accumulation. Hydrogen anneals effectively passivate border traps in the oxide, in addition to some of the midgap states that control carrier generation in the channel. This is evident in the reduced frequency dispersion in accumulation, reduced capacitance-voltage stretch-out through depletion, and suppression of the inversion carrier response in capacitance-voltage measurements.

引用

页数：3

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