Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner

被引：57

作者：

van de Kerkhof, Mark ^{[1
]}

Jasper, Hans ^{[1
]}

Levasier, Leon ^{[1
]}

Peeters, Rudy ^{[1
]}

van Es, Roderik ^{[1
]}

Bosker, Jan-Willem ^{[1
]}

Zdravkov, Alexander ^{[1
]}

Lenderink, Egbert ^{[1
]}

Evangelista, Fabrizio ^{[1
]}

Broman, Par ^{[1
]}

Bilski, Bartosz ^{[1
]}

Last, Thorsten ^{[1
]}

机构：

[1] ASML Netherlands BV, De Run 6501, NL-5504 DR Veldhoven, Netherlands

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII | 2017年 / 10143卷

关键词：

EUV; CD Uniformity; Overlay; Focus; Productivity; Pellicle;

D O I：

10.1117/12.2258025

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

With the introduction of its fifth-generation EUV scanner, the NXE:3400B, ASML has brought EUV to High-Volume Manufacturing for sub-10nm node lithography. This paper presents lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour (or wph). Advances in source power have enabled a further increase of tool productivity requiring an associated increase of stage scan speeds. To maximize the number of yielding die per day a stringent Overlay, Focus, and Critical Dimension (CD) control is required. Tight CD control at improved resolution is obtained through a number of innovations: the NXE:3400B features lower aberration levels and a revolutionary new illumination system, offering improved pupil-fill ratio and larger sigma range. Overlay and Focus are further improved by implementation of a new wafer clamp and improved scanner controls. The NXE:3400B also offers full support for reticle pellicles.

引用

页数：14

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