Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots -: art. no. 205329

被引：11

作者：

Péronne, E

Fossard, F

Julien, FH

Brault, J

Gendry, M

Salem, B

Bremond, G

Alexandrou, A

机构：

[1] Ecole Polytech, Ecole Natl Super Tech, INSERM,U451, CNRS,UMR 7645,Lab Opt & Biosci, F-91128 Palaiseau, France

[2] Ecole Natl Super TEch Avancees, Ecole Polytech, CNRS,UMR 7639, Lab Opt Appl, F-91761 Palaiseau, France

[3] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[4] Ecole Cent Lyon, CNRS, UMR 5512, Lab Electron Optoelectron & Microsyst, F-69134 Ecully, France

[5] Inst Natl Sci Appl, CNRS, UMR 5511, Phys Mat Lab, F-69621 Villeurbanne, France

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.67.205329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed a dynamic saturation of an intersublevel transition in InAs/InxAl1-xAs quantum dots related to the discrete nature of electron states using midinfrared femtosecond spectroscopy. This dynamic saturation is a consequence of the gradual filling of the discrete quantum-dot electron states due to the capture of electrons injected in the barrier. Our interpretation of the differential transmission experiments is confirmed by a comparison with a rate-equation model with the capture and intersublevel relaxation time as fit parameters yielding 10 ps and 1 ps, respectively. We discuss the mechanism responsible for these relaxation times.

引用

页数：4

共 22 条

[1] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].

BENISTY, H ;

SOTOMAYORTORRES, CM ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948

[2] ELECTRON RELAXATION IN QUANTUM DOTS BY MEANS OF AUGER PROCESSES [J].

BOCKELMANN, U ;

EGELER, T .

PHYSICAL REVIEW B, 1992, 46 (23) :15574-15577

[3] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].

BOCKELMANN, U ;

BASTARD, G .

PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951

[4] Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Olivares, J ;

Salem, B ;

Benyattou, T ;

Bremond, G .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :506-510

[5] Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission [J].

Feldmann, J ;

Cundiff, ST ;

Arzberger, M ;

Böhm, G ;

Abstreiter, G .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1180-1183

[6] Phonon-assisted capture and intradot Auger relaxation in quantum dots [J].

Ferreira, R ;

Bastard, G .

APPLIED PHYSICS LETTERS, 1999, 74 (19) :2818-2820

[7] Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications [J].

Fossard, F ;

Julien, FH ;

Péronne, E ;

Alexandrou, A ;

Brault, J ;

Gendry, M .

INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (3-5) :443-451

[8] Intraband relaxation in CdSe quantum dots [J].

Guyot-Sionnest, P ;

Shim, M ;

Matranga, C ;

Hines, M .

PHYSICAL REVIEW B, 1999, 60 (04) :R2181-R2184

[9] Density of states and phonon-induced relaxation of electrons in semiconductor quantum dots [J].

Inoshita, T ;

Sakaki, H .

PHYSICAL REVIEW B, 1997, 56 (08) :R4355-R4358

[10] ELECTRON RELAXATION IN A QUANTUM DOT - SIGNIFICANCE OF MULTIPHONON PROCESSES [J].

INOSHITA, T ;

SAKAKI, H .

PHYSICAL REVIEW B, 1992, 46 (11) :7260-7263

← 1 2 3 →