Thermally isolated MOSFET for gas sending application

被引：20
作者：
Briand, D [1 ]
Sundgren, H
van der Schoot, B
Lundström, I
de Rooij, NF
机构：
[1] Univ Neuchatel, Inst Microtechnol, CH-2007 Neuchatel, Switzerland
[2] Linkoping Univ, S SENCE, S-58183 Linkoping, Sweden
[3] Linkoping Univ, Appl Phys Lab, S-58183 Linkoping, Sweden
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 01期
关键词：
chemical transducers; gas detectors; heating; low power; micromachining; microsensors; MOSFETs;
D O I：
10.1109/55.892428
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the device is 2 degreesC/mW with a thermal constant less than 100 ms. Holes are made in the passivation film over the gates of the MOSFET and gas sensitive films deposited on top of the gate insulator. The low thermal mass device realized allows new modes of operation for MOSFET gas sensors such as a combination of the field and thermal effects and a pulsed temperature mode of operation.
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页码：11 / 13
页数：3
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