Additive chemistry and distributions in photoresist thin films

被引：3

作者：

Clark, Michael B., Jr. ^{[1
]}

Hong, Chang-Young ^{[2
]}

Thackeray, James ^{[3
]}

机构：

[1] Dow Chem Co USA, 400 Arcola Rd, Collegeville, PA 19426 USA

[2] Dow Elect Mat, 20,Samsung 1 Ro 5 Gil, Hwaseong 445170, Gyeonggi Do, South Korea

[3] Dow Elect Mat, 455 Forest St, Marlborough, MA 01752 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2016年 / 34卷 / 03期

关键词：

D O I：

10.1116/1.4943512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lithographic performance of thin photoresist films is a function of the distribution of formulation components, such as photoacid generator (PAG) molecules, and how these components undergo chemical modification and migrate within the film during the lithography processing steps. Argon gas cluster ion beam - secondary ion mass spectrometry depth profiles were used to monitor the PAG and quencher base distributions before and after exposure and postexposure bake processing steps for different photoresist formulations. PAG and quencher base distributions were correlated to depth of focus lithographic performance results. (C) 2016 American Vacuum Society.

引用

页数：6

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